New Silicon Carbide Semiconductors Bring EV Efficiency Gains

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Electrical automobiles have hit the streets, after spending much of the 20th century languishing in development hell. Automakers are working tirelessly to boost range and recharge times to produce cars more palatable to consumers.

Having uncertainty regarding the future of fossil fuels and a base of earnings, developments are happening at a rapid pace. Every so often, that a brand-new technology promises to provide a step change in functionality, although oftentimes, change is slow. Silicon carbide (SiC) semiconductors are just such a tech, and have already begun to revolutionise the industry.

Mind The Bandgap
A chart showing the relationship between band gap and temperature for a variety of stages of Silicon Carbide.

Electrical vehicles also have relied on acoustic power transistors in their structure. Having long been the semiconductor material that was hottest, it has opened up to competition. Semiconductor materials have varying properties that make them better suited for a variety of programs, together with silicon carbide being attractive for high-power software. It all comes down to the bandgap.

Electrons in a semiconductor can sit in one of 2 energy bands – the band, or the running band. To leap from the valence band to the running band, the electron needs to reach the energy level of the running band, where no electrons can exist, jumping the ring gap.  In silicon, the bandgap is around 1-1.5 electron volts (eV), although in silicon carbide, the band gap of the material is on the purchase of 2.3-3.3 eV. This band gap makes the breakdown voltage of silicon carbide parts much greater, as a electric field is required to overcome the difference. Many modern electric cars operate with 400 V batteries, using Porsche equipping their Taycan using an 800 V system. The obviously substantial breakdown voltage of silicon carbide makes it highly convenient to operate in these programs.

It All Adds Up

This broader band gap semiconductor’s advantages flow on to other style factors, too. Thanks to breakdown voltage and lower on-resistance, at 1200 amps, a SiC part can have a size 20 times bigger than a similar silicon part. This smaller dimensions then will help increase switching speed, further decreasing declines that end up as heating. If that weren’t sufficient, silicon carbide components can cope with junction temperatures up to 200 C, over and over the 150 C average of silicon components.

Breakthroughs in procedures have allowed the production of silicon carbide wafers of acceptable quality for use.

Until recently, however, silicon carbide wasn as a semiconductor technology, due primarily.  Thanks to advances in manufacturing processes, it’s ’s now possible to make wafers using a single-crystal expansion procedure , with decent yields for cost effective manufacturing.

All these performance gains put SiC technology from the box seat to reevaluate electric car technology. ST Microelectronics provide the example of a traction inverter, the hardware that takes power from the battery and also drives a EV’s motor. Able to handle higher voltages in a more compact package, and equipped to deal with more heat, SiC semiconductors allow the device to be downsized on the purchase of 70% and also have requirements. In addition, as heat , less power is wasted with the lower on-resistance and switching resistance; enabling the vehicle push further on a single charge and to be efficient.

The technology also has applications from the charging aspect of matters. SiC parts promise to provide more compact chargers, effective at delivering a speedy charge with lower losses. As electric vehicles continue to proliferate, the demand for chargers will soon probably skyrocket, therefore any space and efficiency gains will soon probably pay dividends. Any power not lost in the charging process doesn’t must get sent across an grid that is already-strained .

Looking To The Marketplace
Tesla’s Model 3 comes with an inverter constructed with silicon carbide technology, increasing efficiency and decreasing cooling requirements.

These instruments have already hit the market in a significant way. Tesla’s Model 3 has been among the earliest vehicles on the road to use the technology, using its principal inverter packing 24 SiC MOSFET modules sourced from ST Microelectronics. It’s probably that, because of the manufacturing ramp up of the mass-produced version, Tesla were using the huge majority of ST’therefore production in 2018. Since that time, similar hardware was rolled out to the Model S and Model X Long Range models, with silicon carbide inverters and other improvements assisting push the vehicle’s maximum range up to 370 miles.

Other automakers are racing to get on the bandwagon, using the Renault-Nissan-Mitsubishi alliance also signing up an arrangement to utilize parts from ST. Meanwhile, Bosch are also ramping up to make components in their brand new Dresden plant. It’s currently uncertain where these components will end up, but using Bosch’s long history as a Tier 1 automotive supplier, it’s probably they’ve obtained a substantial customer base in their hands.

Eventually many, if not all, electric vehicles will probably make the change. Vehicles utilizing SiC hardware will have the advantage in power efficiency, packaging, scope, and functionality, and it’s improbable vehicles using conventional silicon hardware will be able to compete efficiently in the medium term. While silicon components will still have a spot in electronic and low-voltage subsystems, it’s highly probable that silicon carbide will require the reigns from the power electronic equipment of the electric automobile moving forward.

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